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首页 > 辅材与耗材 > 光刻胶 > AZ 光刻胶系列

    AZ 4562/AZ 4533 光刻胶

    • 型号安智AZ 4533/AZ 4562正性光刻胶厚胶
    • 品牌AZ
    • 类型厚胶、正胶
    • 匀胶厚度2~9微米

    AZ 4500系列光刻胶包括:AZ 4533、AZ4562 匀胶厚度约在3~6微米

    1. 详细信息

    AZ®4500系列

    具有最佳粘附力的厚光刻胶

    特点:

    AZ ® 4500系列AZ ® 4533AZ ® 4562)是正性厚光刻胶,在普通湿法蚀刻和电镀工艺中具有优良的粘附性能:

    l  优化对所有常见基材的附着力

    l  宽广的工艺参数窗口,可实现稳定且可重复的光刻工艺

    l  与所有常见的显影液兼容(基于KOHTMAH

    l  与所有常见的去胶剂兼容(例如AZ100去胶剂、有机溶剂或碱性溶剂)

    l  ghi线敏感(约320-440 nm

    l  光刻胶厚度范围约 3-30微米


    A® 4500系列AZ ® 4533AZ ® 4562的溶剂浓度不同,因此可达到的光刻胶膜厚有较大的范围:

    光刻胶型号

    光刻胶膜厚范围

    包装规格

    AZ ® 4533

    转速为4000 rpm时,膜厚约为3.3 µm;通过改变转速,膜后可达2.5-5 µm

    多规格包装,如1L2.5L

    AZ ® 4562

    转速为4000 rpm时,膜厚约为3.3 µm;通过改变转速,膜后可达4.5-10 µm;调整旋转轮廓(中等旋涂速度下短时间旋涂),可达30 µm膜厚。

    多规格包装,如1L2.5L


    若光刻胶膜厚度 30 µm?

    通常,AZ®4562可以用来涂覆厚度达30微米及以上。然而,在该厚度范围内,软烘烤、曝光、显影等变得非常耗时。此外,如果涂得太厚,AZ®4562也可能在曝光期间形成N2气泡。 因此,对于厚度大于30 µm的光刻胶膜厚度,强烈建议使用化学放大的AZ®40 XT光刻胶。

    显影液——适用于AZ ® 4500光刻胶

    如果可以使用含金属离子的显影液,可使用14稀释的KOHAZ®400K作为显影液(对于更高的光刻胶膜厚度,可用13.5 - 11的稀释浓度)。

    如果必须使用不含金属离子的显影液,我们建议使用基于TMAH基的AZ®326 MIFAZ®726 MIFAZ®826 MIF显影剂(未稀释)。

     

    去胶剂——适用于AZ ® 4500光刻胶

    对于非交联的光刻胶薄膜,可以使用AZ®100作为去胶剂,DMSO或其他常见的有机溶剂作为剥离剂。 如果光刻胶膜已交联(例如,在干法蚀刻等离子工艺或离子注入时,> 140°C的高温步骤时),我们建议使用不含NMPTechniStrip P1316作为去胶剂。

    AZ 4500 Series

    Thick Film

    Photoresists

    GENERAL INFORMATION

    This series of positive photoresists is intended for applications where coating thicknesses

    above 3 µm are required. When using a standard photoresist at film thicknesses above 3

    µm, the necessary exposure energy drastically increases. This is due to the absorption of the

    photoactive compound (PAC) in the actinic range of the spectrum. So with increasing film

    thickness exposure dose has to be adjusted to provide sufficient energy also at the bottom

    of the photoresist, otherwise the pattern cannot be cleared. In extreme cases it becomes

    almost impossible to expose the resist properly and exposure doses above 1000 mJ/cm²

    have to be applied. Under these conditions unwanted side effects also appear: the dose at

    the surface of the photoresist becomes too high and induces crosslinking of the resist. This

    effect is similar to the well known deep-UV hardening used to preserve the resist profiles at

    postbake temperatures up to 200°C. Standard resist would also generate too much nitrogen

    during exposure which, trapped in the thick layer, cannot diffuse fast enough and may lead

    to lifting of the resist.

    For AZ 4500-series photoresists we have chosen a special photoactive compound with

    low absorption and reduced nitrogen content which enables these resists to be used at

    thicknesses up to 50 µm. The highest viscosity product AZ 4562 allows to spin coat 10 µm in

    a single step (2000 rpm). For even higher thicknesses special coating techniques have to be

    applied:

    1. The common spin time of about 30 - 40 seconds is reduced down to only 3 seconds.

    By this 20 µm are obtained, however the substrate has to be left on the spinner in a

    horizontal position for another minute to allow for drying.

    2. AZ 4562 may be multiple coated with a bake cycle in-between. Due to the high solids

    content of this resist, which is close to the dissolution limit, the underlying coating

    will only be dissolved minor. The bake temperatures in-between should not exceed

    90°C or the final prebake temperature.

    When using high film thicknesses some special guidelines have to be observed: after coating

    the resist should be kept at room temperature for at least 15 minutes to allow most of the

    solvent to evaporate before it is put into an oven for prebake. Otherwise the resist surface

    will dry quite fast and trapped solvent remaining in the bulk may form bubbles and lift the

    resist film. Adhesion failure is the result. Using a hotplate instead of an oven is the better

    choice, especially when the temperature is ramped to the final value.

     The development process also has to be adopted to the high film thickness: Background forthis is the fact that even heavily overexposed positive photoresists only have limited dissolution rates. There is a saturation at values in the order of 100 nm/s. For this it is

    recommended to operate at development rates of about 2 µm/min. and adjust the exposure dose for proper clearing and feature size.


    This resist series is designed for use with any common sodium and potassium based developer. AZ 340, 1:5 diluted with water is a good choice, AZ 400K may be used as well.

    AZ 4562/AZ 4533 光刻胶基本参数